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        EEPW首頁 > 光電顯示 > 設計應用 > 電池供電小夜燈電路

        電池供電小夜燈電路

        作者: 時間:2010-01-18 來源:網(wǎng)絡 收藏

        --Battery-powered Night Lamp

        本文引用地址:http://www.antipu.com.cn/article/169390.htm

        1,R2___________1M 1/4W Resistors
        R3_____________47K 1/4W Resistor (optional: see Notes)
        R4____________Photo resistor (any type, optional: see Notes)

        C1____________100nF 63V Polyester Capacitor
        C2____________220F 25V Electrolytic Capacitor

        D1______________LED Red 10mm. Ultra-bright (see Notes)
        D2___________1N5819 40V 1A Schottky-barrier Diode (see Notes)

        IC1____________7555 or TS555CN CMos Timer IC

        B1_____________1.5V Battery (AA or AAA cell etc.)

        Device purpose:

        This circuit is usable as a Night Lamp when a wall mains socket is not available to plug-in an ever running small neon lamp device. In order to ensure minimum battery consumption, one 1.5V cell is used, and a simple voltage doubler drives a pulsating ultra-bright LED: current drawing is less than 500A.
        An optional Photo resistor switches-off the circuit in daylight or when room lamps illuminate, allowing further current economy.
        This device will run for about 3 months continuously on an ordinary AA sized cell or for around 6 months on an alkaline type cell but, adding the Photo resistor circuitry, running time will be doubled or, very likely, triplicated.

        Circuit operation:

        IC1 generates a square wave at about 4Hz frequency. C2 D2 form a voltage doubler, necessary to raise the battery voltage to a peak value able to drive the LED.

        Notes:

        IC1 must be a CMos type: only these devices can safely operate at 1.5V supply or less.

        If you are not needing Photo resistor operation, omit R3 R4 and connect pin 4 of IC1 to positive supply.

        Ordinary LEDs can be used, but light intensity will be poor.

        An ordinary 1N4148 type diode can be used instead of the 1N5819 Schottky-barrier type diode, but LED intensity will be reduced due to the higher voltage drop.

        Any Schottky-barrier type diode can be used in place of the 1N5819.

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